TY  - BOOK
AU  - Feng,Zhe Chuan
TI  - III-nitride: semiconductor materials 
SN  - 1860946364
AV  - TK7871.15.N57 A1299 2006eb
U1  - 541.377 22
PY  - 2006///
CY  - London, Singapore, Hackensack, NJ
PB  - Imperial College Press, Distributed by World Scientific
KW  - Semiconductors
KW  - Materials
KW  - Nitrides
KW  - Semiconducteurs
KW  - Nitrures
KW  - Propriétés électriques
KW  - Électronique
KW  - Matériaux
KW  - Dépôt en phase vapeur par organométalliques
KW  - SCIENCE
KW  - Chemistry
KW  - Physical & Theoretical
KW  - bisacsh
KW  - Electronic books
N1  - .Includes bibliographical references; Cover -- Contents -- Preface -- Chapter 1 Hydride vapor phase epitaxy of group III nitride materials -- 1. Introduction -- 2. Experiment -- 3. Material Properties -- 3.1. Undoped GaN layers -- 3.2. Si-doped GaN layers -- 3.3. Mg-doped GaN layers -- 3.4. Zn-doped GaN layers -- 3.5. AlN layers -- 3.6. AlGaN layers -- 3.7. InN and InGaN layers -- 4. New directions in HVPE development -- 4.1. Large area and multi wafer HVPE growth -- 4.2. Multi-layer structures -- 4.3. P-n junctions -- 4.4. Structures with two dimensional carrier gas -- 4.5. Nano structures and porous materials -- 5. Applications of HVPE grown group III nitride materials -- 5.1. Substrate applications -- 5.2. Device Applications -- 6. Conclusions -- Chapter 2 Planar MOVPE technology for epitaxy of III-nitride 
 .materials -- 1. History of Reactor Development for III-Nitrides
N2  - III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, 
 .scientists and students working towards such goals
ER  -