000			03298cam a2200445Ia 4500
003			BUC
005			20220330085505.0
008			200119s2006 enka gob 000 0 eng d
010			_a2006299211
020			_a1860946364
020			_a9781860946363
020			_a1860949037 (ebook)
020			_a9781860949036 (ebook)
020			_a9786611867218
020			_a661186721X
040			_aBADR UNIVERSITY IN CAIRO _beng _cBADR UNIVERSITY IN CAIRO _erda
041			_aeng
050		4	_aTK7871.15.N57 _bA1299 2006eb
082	0	4	_a541.377 _222 _bINI
245	1	0	_aIII-nitride _bsemiconductor materials / _ceditor, Zhe Chuan Feng.
260			_aLondon : _bImperial College Press ; _aSingapore ; _aHackensack, NJ : _bDistributed by World Scientific, _cc2006.
300			_a1 online resource (xii, 428 p.) : _bill.
504			_a.Includes bibliographical references
505			_aCover -- Contents -- Preface -- Chapter 1 Hydride vapor phase epitaxy of group III nitride materials -- 1. Introduction -- 2. Experiment -- 3. Material Properties -- 3.1. Undoped GaN layers -- 3.2. Si-doped GaN layers -- 3.3. Mg-doped GaN layers -- 3.4. Zn-doped GaN layers -- 3.5. AlN layers -- 3.6. AlGaN layers -- 3.7. InN and InGaN layers -- 4. New directions in HVPE development -- 4.1. Large area and multi wafer HVPE growth -- 4.2. Multi-layer structures -- 4.3. P-n junctions -- 4.4. Structures with two dimensional carrier gas -- 4.5. Nano structures and porous materials -- 5. Applications of HVPE grown group III nitride materials -- 5.1. Substrate applications -- 5.2. Device Applications -- 6. Conclusions -- Chapter 2 Planar MOVPE technology for epitaxy of III-nitride .materials -- 1. History of Reactor Development for III-Nitrides
520			_aIII-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, .scientists and students working towards such goals
588			_a.Description based on print version record
650		0	_aSemiconductors _xMaterials.
650		0	_aNitrides.
650		6	_aSemiconducteurs.
650		6	_aNitrures _xPropriétés électriques.
650		6	_aÉlectronique _xMatériaux.
650		6	_aDépôt en phase vapeur par organométalliques.
650		7	_aSCIENCE _xChemistry _xPhysical & Theoretical. _2bisacsh.
655		4	_aElectronic books.
700	1		_aFeng, Zhe Chuan.
902			_aN.Tolba
942			_2ddc _cBK
999			_c2145 _d2145